Defect free Silicon Carbide (SiC) wafers is the holy grail for high power SiC device manufacturers. Kisab’s novel and patented growth technique (named Fast Sublimation Growth Process) minimizing wafer defects thus enabling its customers to build larger devices and enjoy much higher production yield.

We invested in Kisab as we see that the SiC market is poised for fast growth, powered by demand from electric vehicles, smart grid, solar PV and similar applications, and we believe Kisab’s unique technology will make an important impact in the market.